Si7846DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71442 .
Document Number: 71442
S09-0537-Rev. F, 06-Apr-09
www.vishay.com
5
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相关代理商/技术参数
SI7848BDP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET
SI7848BDP-T1-E3 功能描述:MOSFET 40V 47A 36W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7848BDP-T1-GE3 功能描述:MOSFET 40V 47A 36W 9.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7848BDP-T1-GE3 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 40V 47A SOIC
SI7848DP 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8
SI7848DP 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 ((NS))
SI7848DP-T1 功能描述:MOSFET 40V 17A 5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7848DP-T1-E3 功能描述:MOSFET 40V 17A 5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube